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| TYPE | DESCRIPTION |
| Manufacturer: | STMicroelectronics |
| Product Category: | RF MOSFET Transistors |
| RoHS: | Details |
| Transistor Polarity: | N-Channel |
| Technology: | Si |
| Id - Continuous Drain Current: | 5 A |
| Vds - Drain-Source Breakdown Voltage: | 25 V |
| Operating Frequency: | 1 GHz |
| Gain: | 11.5 dB |
| Output Power: | 8 W |
| Minimum Operating Temperature: | - 65 C |
| Maximum Operating Temperature: | + 150 C |
| Mounting Style: | SMD/SMT |
| Package / Case: | PowerSO-10RF-Formed-4 |
| Packaging: | Tube |
| Brand: | STMicroelectronics |
| Channel Mode: | Enhancement |
| Configuration: | Single |
| Height: | 3.5 mm |
| Length: | 7.5 mm |
| Moisture Sensitive: | Yes |
| Pd - Power Dissipation: | 73 W |
| Product Type: | RF MOSFET Transistors |
| Series: | PD54008-E |
| Factory Pack Quantity: Factory Pack Quantity: | 400 |
| Subcategory: | MOSFETs |
| Type: | RF Power MOSFET |
| Vgs - Gate-Source Voltage: | 20 V |
| Width: | 9.4 mm |
| Unit Weight: | 0.105822 oz |
