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| TYPE | DESCRIPTION |
| Manufacturer: | ROHM Semiconductor |
| Product Category: | MOSFET |
| RoHS: | Details |
| Technology: | Si |
| Mounting Style: | SMD/SMT |
| Package / Case: | TO-252-3 |
| Transistor Polarity: | N-Channel |
| Number of Channels: | 1 Channel |
| Vds - Drain-Source Breakdown Voltage: | 190 V |
| Id - Continuous Drain Current: | 10 A |
| Rds On - Drain-Source Resistance: | 182 mOhms |
| Vgs - Gate-Source Voltage: | - 20 V, + 20 V |
| Vgs th - Gate-Source Threshold Voltage: | 500 mV |
| Qg - Gate Charge: | 52 nC |
| Minimum Operating Temperature: | - 55 C |
| Maximum Operating Temperature: | + 150 C |
| Pd - Power Dissipation: | 85 W |
| Channel Mode: | Enhancement |
| Packaging: | Reel |
| Brand: | ROHM Semiconductor |
| Configuration: | Single |
| Fall Time: | 75 ns |
| Forward Transconductance - Min: | 6 S |
| Product Type: | MOSFET |
| Rise Time: | 20 ns |
| Series: | RD3S |
| Factory Pack Quantity: Factory Pack Quantity: | 2500 |
| Subcategory: | MOSFETs |
| Typical Turn-Off Delay Time: | 140 ns |
| Typical Turn-On Delay Time: | 15 ns |
| Unit Weight: | 0.011640 oz |
