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PSMN6R0-30YL,115

  • PSMN6R0-30YL,115
  • PSMN6R0-30YL,115
： PSMN6R0-30YL,115
： MOSFETs(1894)
： NXP恩智浦
： N沟道 VDS=30V
： -
：
： YES
TYPEDESCRIPTION
产品分类MOSFETs 晶体管
阈值电压Vgs(th)6毫欧@15A，10V
漏极电流Idss79A
FET类型N沟道
不同 Id，Vgs时的 RdsOn（最大值）2.15V@1mA
漏源极电压（Vdss）30V
漏源电压(Vdss)30V
导通电阻Rds On(Max)6mΩ
功率(Max)55W
工作温度(Tj)-55°C~175°C
安装类型表面贴装(SMT)
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