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PSMN6R0-30YL,115
PSMN6R0-30YL,115
:
PSMN6R0-30YL,115
:
MOSFETs(1894)
:
NXP恩智浦
:
N沟道 VDS=30V
:
-
:
:
YES
TYPE
DESCRIPTION
产品分类
MOSFETs 晶体管
阈值电压Vgs(th)
6毫欧@15A,10V
漏极电流Idss
79A
FET类型
N沟道
不同 Id,Vgs时的 RdsOn(最大值)
2.15V@1mA
漏源极电压(Vdss)
30V
漏源电压(Vdss)
30V
导通电阻Rds On(Max)
6mΩ
功率(Max)
55W
工作温度(Tj)
-55°C~175°C
安装类型
表面贴装(SMT)
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