TYPE | DESCRIPTION |
Fet Type: | N-Ch |
No of Channels: | 1 |
Drain-to-Source Voltage [Vdss]: | 20V |
Drain-Source On Resistance-Max: | 950mΩ |
Rated Power Dissipation: | 300mW |
Qg Gate Charge: | 1.82nC |
Gate-Source Voltage-Max [Vgss]: | 6V |
Drain Current: | 915mA |
Turn-on Delay Time: | 3.7ns |
Turn-off Delay Time: | 25ns |
Rise Time: | 4.4ns |
Fall Time: | 7.6ns |
Operating Temp Range: | -55°C to +150°C |
Gate Source Threshold: | 1.1V |
Technology: | Si |
Height - Max: | 0.9mm |
Length: | 1.65mm |
Input Capacitance: | 110pF |
Package Style: | SC-75 |
Mounting Method: | Surface Mount |